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this is information on a product in full production. april 2013 docid024559 rev 1 1/14 14 STW57N65M5-4 n-channel 650 v, 0.056 typ., 42 a, mdmesh? v power mosfet in a to247-4 package datasheet ? production data figure 1. internal schematic diagram features ? higher v ds rating ? higher dv/dt capability ? excellent switching performance thanks to the extra driving source pin ? easy to drive ? 100% avalanche tested applications ? high efficiency switching applications: ?servers ?pv inverters ? telecom infrastructure ? multi kw battery chargers description this device is an n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. d(1) g(4) s(2) driver source(3) am10177v1 to247-4 1 2 3 4 order code v ds @ t jmax r ds(on) max i d STW57N65M5-4 710 v 0.063 42 a table 1. device summary order code marking package packaging STW57N65M5-4 57n65m5 to247-4 tube www.st.com
contents STW57N65M5-4 2/14 docid024559 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 docid024559 rev 1 3/14 STW57N65M5-4 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 42 a i d drain current (continuous) at t c = 100 c 26.5 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 168 a p tot total dissipation at t c = 25 c 250 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 11 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 960 mj dv/dt (2) 2. i sd 42 a, di/dt = 400 a/s, peak v ds < v (br)dss , v dd = 400 v peak diode recovery voltage slope 15 v/ns dv/dt (3) 3. v ds 520 v mosfet dv/dt ruggedness 50 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 0.50 c/w r thj-amb thermal resistance junction-ambient max 50 c/w electrical characteristics STW57N65M5-4 4/14 docid024559 rev 1 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = 650 v v ds = 650 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 21 a 0.056 0.063 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 4200 - pf c oss output capacitance - 115 - pf c rss reverse transfer capacitance -9-pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance time related v gs = 0, v ds = 0 to 520 v - 303 - pf c o(er) (2) 2. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent capacitance energy related v gs = 0, v ds = 0 to 520 v - 93 - pf r g intrinsic gate resistance f = 1 mhz open drain - 1.3 - q g total gate charge v dd = 520 v, i d = 21 a, v gs = 10 v (see figure 16 ) -98-nc q gs gate-source charge - 23 - nc q gd gate-drain charge - 40 - nc docid024559 rev 1 5/14 STW57N65M5-4 electrical characteristics table 6. switching times symbol parameter test conditions min. typ. max. unit t d(v) voltage delay time v dd = 400 v, i d = 28 a, r g = 4.7 , v gs = 10 v (see figure 17 ) (see figure 20 ) -79-ns t r(v) voltage rise time - 9 - ns t f(i) current fall time - 8 - ns t c(off) crossing time - 14 - ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd source-drain current - 42 a i sdm (1) 1. pulse width limited by safe operating area source-drain current (pulsed) - 168 a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 42 a, v gs = 0 - 1.5 v t rr reverse recovery time i sd = 42 a, di/dt = 100 a/s v dd = 100 v (see figure 17 ) - 418 ns q rr reverse recovery charge - 8 c i rrm reverse recovery current - 40 a t rr reverse recovery time i sd = 42 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 17 ) - 528 ns q rr reverse recovery charge - 12 c i rrm reverse recovery current - 44 a electrical characteristics STW57N65M5-4 6/14 docid024559 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. gate charge vs gate-source voltage figure 7. static drain-source on-resistance i d 100 10 1 0.1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 100s 1ms 10ms tj=150c tc=25c single pulse am14705v1 i d 60 40 20 0 0 8 v ds (v) 16 (a) 4 12 80 100 v gs = 6 v v gs = 7 v v gs = 8 v v gs = 9, 10 v am14706v1 i d 60 40 20 0 3 5 v gs (v) 7 (a) 4 6 8 80 100 9 v ds = 25 v am14707v1 v gs 6 4 2 0 0 20 q g (nc) (v) 80 8 40 60 10 v dd =520v i d =21a 100 300 200 100 0 400 500 v ds (v) v ds am14708v1 r ds(on) 0.056 0.054 0.052 0.05 0 20 i d (a) ( ) 10 30 0.058 0.060 0.062 v gs =10v am14709v1 docid024559 rev 1 7/14 STW57N65M5-4 electrical characteristics figure 8. capacitance variations figure 9. output capacitance stored energy figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. normalized v ds vs temperature c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 10000 100 ciss coss crss am14710v1 e oss 4 2 0 0 100 v ds (v) (j) 400 6 200 300 8 10 500 600 12 14 16 18 am14711v1 v gs(th) 1.00 0.90 0.80 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250a am04972v1 r ds(on) 1.7 1.5 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.3 1.9 2.1 125 i d = 21 a v gs = 10 v am05501v2 v sd 0 20 i sd (a) (v) 10 50 30 40 0 0.2 0.4 0.6 0.8 1.0 1.2 t j =-50c t j =150c t j =25c am04974v1 v ds -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.98 1.00 1.04 1.06 1.02 i d = 1ma 1.08 am10399v1 electrical characteristics STW57N65M5-4 8/14 docid024559 rev 1 figure 14. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode. e 0 0 20 r g ( ) ( j) 10 30 100 200 40 eon eoff 300 400 500 600 700 800 am11171v1 docid024559 rev 1 9/14 STW57N65M5-4 test circuits 3 test circuits figure 15. switching times test circuit for resistive load figure 16. gate charge test circuit figure 17. test circuit for inductive load switching and diode recovery times figure 18. unclamped inductive load test circuit figure 19. unclamped inductive waveform figure 20. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d $ 0 y , g 9 j v 9 g v 9 g v , g 9 j v r q 7 g h o d \ r i i 7 i d o o 7 u l v h 7 f u r v v r y h u 9 g v , g 9 j v , w r q r i i 7 i d o o 7 u l v h & |